Diodes IncorporatedFMMT619TAGP BJT

Trans GP BJT NPN 50V 2A 806mW 3-Pin SOT-23 T/R

Implement this NPN FMMT619TA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Import TariffMay apply to this part

Auf Lager: 366.000 Stück

Regional Inventory: 105.000

    Total367,80 €Price for 3000

    105.000 auf Lager: morgen versandbereit

    • (3000)

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2350+
      Manufacturer Lead Time:
      28 Wochen
      Country Of origin:
      China
      • In Stock: 105.000 Stück
      • Price: 0,1226 €
    • (3000)

      Versand in vsl. 3 Tagen

      Ships from:
      Niederlande
      Date Code:
      2431+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 261.000 Stück
      • Price: 0,1397 €