| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2SC5347AF-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 2 V. Its maximum power dissipation is 1300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |