onsemiBSP52T1GDarlington BJT
Trans Darlington NPN 80V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 90 | |
| 5 | |
| 1.9@0.5mA@500mA | |
| 1 | |
| 1.3@0.5mA@500mA | |
| 1000@150mA@10V|2000@500mA@10V | |
| 1250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.57 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the NPN BSP52T1G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.5mA@500mA V. Its maximum power dissipation is 1250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |