STMicroelectronicsD44H11GP BJT
Trans GP BJT NPN 80V 10A 50000mW 3-Pin(3+Tab) TO-220AB Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single | |
1 | |
80 | |
80 | |
5 | |
150 | |
1.5@0.8A@8A | |
1@0.4A@8A | |
10 | |
60@2A@1V|40@4A@1V | |
50000 | |
-55 | |
150 | |
Tube | |
Industrial | |
Befestigung | Through Hole |
Verpackungshöhe | 9.15(Max) |
Verpackungsbreite | 4.6(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO-220 |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
This NPN D44H11 general purpose bipolar junction transistor from STMicroelectronics is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |