| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Base | |
| 2 | |
| 60 | |
| 50 | |
| 7 | |
| 0.5@10mA@100mA | |
| 0.1 | |
| 210@2mA@10V | |
| 150 | |
| 150(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.7(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 5 |
| Standard-Verpackungsname | SMini5-F3-B |
| Lieferantenverpackung | SMini5-F3-B |
| 5 | |
| Leitungsform | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP DMA502010R GP BJT from Panasonic. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |