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onsemiDTA115EET1GDigital-BJT
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R
Compliant | |
EAR99 | |
Active | |
Automotive | No |
PPAP | No |
PNP | |
Single | |
50 | |
100 | |
80@5mA@10V | |
100 | |
1 | |
0.25@0.3mA@10mA | |
300 | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.75 |
Verpackungsbreite | 0.8 |
Verpackungslänge | 1.6 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-416 |
3 | |
Leitungsform | Gull-wing |
Look no further than ON Semiconductor's PNP DTA115EET1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.