onsemiDTC143TET1GDigital-BJT
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 160@5mA@10V | |
| 4.7 | |
| 0.25@1mA@10mA | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-416 |
| 3 | |
| Leitungsform | Gull-wing |
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor's NPN DTC143TET1G digital transistor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |