Infineon Technologies AGIMZA65R072M1HXKSA1MOSFETs
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R107M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.
Summary of Features
- • Low capacitances
- • Optimized switching behavior at higher currents
- • Commutation robust fast body diode with low reverse recovery charge (Qrr)
- • Superior gate oxide reliability
- • Excellent thermal behavior
- • Increased avalanche capability
- • Works with standard drivers
Benefits
- • High performance, high reliability and ease of use
- • Allows high system efficiency
- • Reduces system cost and complexity
- • Enables smaller system size
- • Works in topologies with continuous hard commutation
- • Fit for high temperature and harsh operations
- • Enables bi-directional topologies
Potential Applications
- • Server
- • Telecom
- • SMPS
- • Solar energy systems
- • Energy storage and battery formation
- • UPS
- • EV charging
- • Motor drives
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EAR99 | |
Active | |
Automotive | No |
PPAP | No |
Power MOSFET | |
SiC | |
Single Dual Source | |
TMOS | |
Enhancement | |
N | |
1 | |
650 | |
18 | |
5.7 | |
28 | |
100 | |
150 | |
94@18V | |
22@18V | |
744@400V | |
9@400V | |
96000 | |
5.6 | |
8.6 | |
21.6 | |
15.2 | |
-55 | |
150 | |
Befestigung | Through Hole |
Verpackungshöhe | 21 |
Verpackungsbreite | 5 |
Verpackungslänge | 15.8 |
Leiterplatte geändert | 4 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-247 |
4 |
EDA / CAD Models |