| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| Automotive | No |
| PPAP | No |
| Kanalart | P |
| Konfiguration | Single |
| Max. Gate-Source-Spannung (V) | -25 |
| Max. Drain-Gate-Spannung (V) | 25 |
| Max. Leistungsaufnahme (mW) | 225 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Drain-Mindestsättigungsstrom (mA) | 7 |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Due to the very high input electrical resistance, there will be very little voltage-drop in your circuit if you use the MMBFJ175LT1G JFET transistor from ON Semiconductor. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
