| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Kanalart | N |
| Konfiguration | Single |
| Max. Drain-Source-Spannung (V) | 25 |
| Max. Gate-Source-Spannung (V) | 25 |
| Max. Leistungsaufnahme (mW) | 225 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
The simplest type of field-effect transistor is this MMBFU310LT1G JFET from ON Semiconductor. Its maximum power dissipation is 225 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a single configuration. This junction field effect transistor has an operating temperature range of -55 °C to 150 °C.
