| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.00 |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 3@5mA@10V |
| Typischer Eingangswiderstand (kOhm) | 1 |
| Typisches Widerstandsverhältnis | 1 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.25@5mA@10mA |
| Max. Leistungsaufnahme (mW) | 310 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 |
| Verpackungsbreite | 1.24 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN MUN5230T1G digital transistor from ON Semiconductor, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 3@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
