STMicroelectronicsSTB80NF10T4MOSFETs
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| STripFET II | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 80 | |
| 15@10V | |
| 135@10V | |
| 135 | |
| 5500@25V | |
| 300000 | |
| 60 | |
| 80 | |
| 116 | |
| 26 | |
| -55 | |
| 175 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.6(Max) |
| Verpackungsbreite | 9.35(Max) |
| Verpackungslänge | 10.4(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-263 |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
This STB80NF10T4 power MOSFET from STMicroelectronics can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes stripfet ii technology.
| EDA / CAD Models |