STMicroelectronicsSTD2HNK60ZMOSFETs
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| SuperMESH | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 2 | |
| 4800@10V | |
| 11@10V | |
| 11 | |
| 280@25V | |
| 45000 | |
| 50 | |
| 30 | |
| 13 | |
| 10 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The STD2HNK60Z power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |