STMicroelectronicsSTD2N62K3MOSFETs
Trans MOSFET N-CH 620V 2.2A 3-Pin(2+Tab) DPAK T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| SuperMESH 3 | |
| Enhancement | |
| N | |
| 1 | |
| 620 | |
| ±30 | |
| 2.2 | |
| 3600@10V | |
| 15@10V | |
| 15 | |
| 340@50V | |
| 45000 | |
| 22 | |
| 4.4 | |
| 21 | |
| 8 | |
| -55 | |
| 150 | |
| Industrial | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.4(Max) |
| Verpackungsbreite | 6.2(Max) |
| Verpackungslänge | 6.6(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the STD2N62K3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with supermesh 3 technology.
| EDA / CAD Models |