STMicroelectronicsSTGE200NB60SIGBT-Module
Trans IGBT Module N-CH 600V 200A 600W 4-Pin ISOTOP Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
N | |
Single Dual Emitter | |
600 | |
600 | |
±20 | |
200 | |
0.1 | |
-55 | |
150 | |
Industrial | |
Tube | |
Befestigung | Screw |
Verpackungshöhe | 9.1(Max) |
Verpackungsbreite | 25.5(Max) |
Verpackungslänge | 38.2(Max) |
Leiterplatte geändert | 4 |
Lieferantenverpackung | ISOTOP |
4 |
The STGE200NB60S IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.