STMicroelectronicsSTGW60V60DFIGBT-Chip
Trans IGBT Chip N-CH 600V 80A 375W 3-Pin(3+Tab) TO-247 Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
N | |
Single | |
±20 | |
600 | |
1.85 | |
80 | |
0.25 | |
375 | |
-55 | |
175 | |
Industrial | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 20.15(Max) |
Verpackungsbreite | 5.15(Max) |
Verpackungslänge | 15.75(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-247 |
3 | |
Leitungsform | Through Hole |
The STGW60V60DF IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C.
EDA / CAD Models |