STMicroelectronicsSTN851GP BJT
Trans GP BJT NPN 60V 5A 1600mW 4-Pin(3+Tab) SOT-223 T/R
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 150 | |
| 60 | |
| 7 | |
| 1.15@200mA@4A | |
| 0.05@5mA@100mA|0.12@50mA@1A|0.25@50mA@2A|0.5@200mA@5A | |
| 5 | |
| 50 | |
| 150@10mA@1V|150@2A@1V|90@5A@1V|30@10A@1V | |
| 1600 | |
| 130(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.8(Max) |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
The three terminals of this NPN STN851 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |