GeneSiC Semiconductor1N8030-GAGleichrichter
Diode Schottky 650V 0.75A 3-Pin(3+Tab) TO-257 Isolated
| Compliant with Exemption | |
| EAR99 | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| 5 | |
| Single | |
| Active | |
| -55 | |
| -55 to 210 | |
| 0.75 | |
| 1.4(Typ) | |
| 210 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.89(Max) |
| Verpackungsbreite | 5.08(Max) |
| Verpackungslänge | 10.67(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-257 Isolated |
| 3 | |
| Leitungsform | Through Hole |
Switch from an AC voltage to a DC voltage using a Schottky diode 1N8030-GA rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 24000 mW. Its peak non-repetitive surge current is 10 A, while its maximum continuous forward current is 0.75 A. This rectifier has a minimum operating temperature of -55 °C and a maximum of 250 °C. It is made in a single configuration.
| EDA / CAD Models |