GeneSiC Semiconductor1N8032-GAGleichrichter
Diode Schottky 650V 2.5A 3-Pin(3+Tab) TO-257 Isolated
| Compliant with Exemption | |
| EAR99 | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| 5 | |
| Single | |
| Active | |
| -55 | |
| -55 to 210 | |
| 2.5 | |
| 1.3(Typ) | |
| 210 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.89(Max) |
| Verpackungsbreite | 5.08(Max) |
| Verpackungslänge | 10.67(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-257 Isolated |
| 3 | |
| Leitungsform | Through Hole |
Switch from an AC voltage to a DC voltage using a Schottky diode 1N8032-GA rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 66000 mW. Its peak non-repetitive surge current is 32 A, while its maximum continuous forward current is 2.5 A. It is made in a single configuration. This rectifier has an operating temperature range of -55 °C to 250 °C.
| EDA / CAD Models |