Central Semiconductor2N1131 PBFREEGP BJT
Trans GP BJT PNP 35V 0.6A 600mW 3-Pin TO-39
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 |
Thanks to Central Semiconductor, your circuit can handle high levels of voltage using the PNP 2N1131 PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |