Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N2222A GP BJT from Microsemi. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| Not Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 50 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.8 | |
| 10000 | |
| 100@10mA@10V|100@150mA@10V|30@500mA@10V|50@0.1mA@10V|75@1mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Bag |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N2222A GP BJT from Microsemi. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |