Compliant | |
EAR99 | |
NRND | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single | |
1 | |
75 | |
50 | |
6 | |
1.2@15mA@150mA|2@50mA@500mA | |
0.3@15mA@150mA|1@50mA@500mA | |
0.8 | |
100@10mA@10V|100@150mA@10V|30@500mA@10V|50@0.1mA@10V|75@1mA@10V | |
500 | |
-65 | |
200 | |
Waffle | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.91(Max) |
Verpackungsbreite | 3.94(Max) |
Verpackungslänge | 5.72(Max) |
Leiterplatte geändert | 4 |
Standard-Verpackungsname | SMD |
Lieferantenverpackung | CSMD |
4 | |
Leitungsform | No Lead |
This specially engineered NPN 2N2222AUA GP BJT from Optek Technology (TT electronics) comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.