| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 140 | |
| 80 | |
| 7 | |
| 1.1@15mA@150mA | |
| -65 to 200 | |
| 0.2@15mA@150mA|0.5@50mA@500mA | |
| 1 | |
| 10 | |
| 100@150mA@10V|15@1A@10V|50@100uA@10V|50@500mA@10V|90@10mA@10V | |
| 800 | |
| 100(Min) | |
| -65 | |
| 200 | |
| Box | |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
Design various electronic circuits with this versatile NPN 2N3019 GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |