Central Semiconductor2N3020GP BJT

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box

This specially engineered NPN 2N3020 GP BJT from Central Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

5 Stück: heute versandbereit

    Total9,78 €Price for 5

    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      1705+
      Manufacturer Lead Time:
      34 Wochen
      Country Of origin:
      Indien
      • In Stock: 5 Stück
      • Price: 1,956 €