Central Semiconductor2N3417 PBFREEGP BJT
Trans GP BJT NPN 50V 0.5A 625mW 3-Pin TO-92
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 5 | |
| 0.85@3mA@50mA | |
| 0.3@3mA@50mA | |
| 0.5 | |
| 100 | |
| 180@2mA@4.5V | |
| 625 | |
| -65 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Add switching and amplifying capabilities to your electronic circuit with this NPN 2N3417 PBFREE GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |