| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.10.00.80 |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2N3440 general purpose bipolar junction transistor, developed by Semelab (TT electronics), is your solution. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V.
