Central Semiconductor2N3440 PBFREEGP BJT
Trans GP BJT NPN 250V 1A 1000mW 3-Pin TO-39
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 250 | |
| 7 | |
| 0.5 | |
| 1.3@4mA@50mA | |
| -65 to 200 | |
| 0.5@4mA@50mA | |
| 1 | |
| 20000 | |
| 40@20mA@10V | |
| 1000 | |
| 15(Min) | |
| -65 | |
| 200 | |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 |
Thanks to Central Semiconductor, your circuit can handle high levels of voltage using the NPN 2N3440 PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 250 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |