Central Semiconductor2N3716GP BJT
Trans GP BJT NPN 80V 10A 150000mW 3-Pin(2+Tab) TO-3 Sleeve
| Supplier Unconfirmed | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.43(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.96(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
Use this versatile NPN 2N3716 GP BJT from Central Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |