Micro Commercial Components2N3906-APGP BJT
Trans GP BJT PNP 40V 0.2A 600mW 3-Pin TO-92 Ammo
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 100@10mA@1V|30@100mA@1V|60@0.1mA@1V|60@50mA@1V|80@1mA@1V | |
| 600 | |
| 250(Min) | |
| -55 | |
| 150 | |
| Ammo | |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.7(Max) |
| Verpackungsbreite | 3.68(Max) |
| Verpackungslänge | 4.7(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Formed |
Compared to other transistors, the PNP 2N3906-AP general purpose bipolar junction transistor, developed by Micro Commercial Components, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |