Central Semiconductor2N3906 PBFREEGP BJT
Trans GP BJT PNP 40V 0.2A 625mW 3-Pin TO-92 Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| 0.85@1mA@10mA|0.95@5mA@50mA | |
| -65 to 150 | |
| 0.25@1mA@10mA|0.4@5mA@50mA | |
| 0.2 | |
| 100@10mA@1V|100@1mA@1V|30@100mA@1V|60@0.1mA@1V|60@50mA@1V|80@1mA@1V | |
| 625 | |
| 250(Min) | |
| -65 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 |
Implement this versatile PNP 2N3906 PBFREE GP BJT from Central Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |