| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-72 |
| 4 | |
| Leitungsform | Through Hole |
This 2N5179 RF amplifier from Central Semiconductor is designed to operate at higher RF frequencies. This product's minimum DC current gain is 25@3mA@1 V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |