| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
If your circuit's specifications require a device that can handle high levels of voltage, Central Semiconductor's NPN 2N5320 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 10000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |