Supplier Unconfirmed | |
EAR99 | |
Active | |
8541.29.00.95 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single | |
1 | |
75 | |
50 | |
5 | |
0.8@50mA@500mA | |
2 | |
40@500mA@4V | |
10000 | |
5(Min) | |
-65 | |
200 | |
Box | |
Durchmesser | 9.4(Max) |
Befestigung | Through Hole |
Verpackungshöhe | 6.6(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-39 |
3 | |
Leitungsform | Through Hole |
Central Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2N5321 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 10000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.