| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.4(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.6(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
This PNP 2N5322 general purpose bipolar junction transistor from Central Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 10000 mW. It has a maximum collector emitter voltage of 75 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |