Central Semiconductor2N5366 LEAD FREEGP BJT
Trans GP BJT PNP 40V 0.3A 625mW 3-Pin TO-92
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Small Signal | |
Si | |
Single | |
1 | |
40 | |
40 | |
4 | |
1.1@2.5mA@50mA|2@30mA@300mA | |
0.25@2.5mA@50mA|1@30mA@300mA | |
0.3 | |
100@50mA@10V|40@300mA@5V|80@2mA@10V | |
625 | |
250(Typ) | |
-65 | |
150 | |
Tape and Reel | |
Befestigung | Through Hole |
Verpackungshöhe | 5.33(Max) |
Verpackungsbreite | 4.19(Max) |
Verpackungslänge | 5.21(Max) |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | TO |
Lieferantenverpackung | TO-92 |
3 | |
Leitungsform | Formed |
Design various electronic circuits with this versatile PNP 2N5366 LEAD FREE GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.