| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) mm |
| Verpackungsbreite | 3(Max) mm |
| Verpackungslänge | 7.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN 2N5657G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 20000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |