Compliant | |
EAR99 | |
Active | |
8541.49.70.80 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Dual | |
2 | |
60 | |
60 | |
5 | |
1.3@15mA@150mA|2.6@50mA@500mA | |
0.4@15mA@150mA|1.6@50mA@500mA | |
0.6 | |
100@10mA@10V|100@150mA@10V|100@1mA@10V|50@150mA@1V|50@300mA@10V|75@100uA@10V | |
600 | |
-65 | |
200 | |
Waffle | |
Befestigung | Surface Mount |
Verpackungshöhe | 2.03(Max) |
Verpackungsbreite | 4.45(Max) |
Verpackungslänge | 6.35(Max) |
Leiterplatte geändert | 6 |
Standard-Verpackungsname | SMD |
Lieferantenverpackung | CSMD |
6 | |
Leitungsform | No Lead |
Design various electronic circuits with this versatile PNP 2N5796U GP BJT from Optek Technology (TT electronics). This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.