onsemi2N6045GDarlington BJT
Trans Darlington NPN 100V 8A 75000mW 3-Pin(3+Tab) TO-220AB Tube
EAR99 | |
Active | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
100 | |
100 | |
5 | |
4.5@80mA@8A | |
8 | |
20 | |
2@12mA@4A|4@80mA@8A | |
100@8A@4V|1000@3A@4V | |
75000 | |
-65 | |
150 | |
Tube | |
Befestigung | Through Hole |
Verpackungshöhe | 9.28(Max) |
Verpackungsbreite | 4.83(Max) |
Verpackungslänge | 10.53(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | TO-220 |
Lieferantenverpackung | TO-220AB |
3 | |
Leitungsform | Through Hole |
ON Semiconductor brings you their latest NPN 2N6045G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@12mA@4A|4@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |