onsemi2N6052GDarlington BJT
Trans Darlington PNP 100V 12A 150000mW 3-Pin(2+Tab) TO-3 Tray
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.37 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
Traditional transistors can produce low current gains. One of ON Semiconductor's PNP 2N6052G Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. This product's maximum continuous DC collector current is 12 A, while its minimum DC current gain is 750@6A@3 V|100@12A@3V. It has a maximum collector emitter saturation voltage of 2@24mA@6A|3@120mA@12A V. Its maximum power dissipation is 150000 mW. This component will be shipped in tray format. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |