Central Semiconductor2N6059 PBFREEDarlington BJT
Trans Darlington NPN 100V 12A 150000mW 3-Pin(2+Tab) TO-3
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.43(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.96(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 |
Amplify your current using Central Semiconductor's NPN 2N6059 PBFREE Darlington transistor in order to yield a higher current gain. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. This product's maximum continuous DC collector current is 12 A, while its minimum DC current gain is 750@6A@3 V|100@12A@3V. It has a maximum collector emitter saturation voltage of 2@24mA@6A|3@120mA@12A V. Its maximum power dissipation is 150000 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |