onsemi2N6287GDarlington BJT
Trans Darlington PNP 100V 20A 160000mW 3-Pin(2+Tab) TO-3 Tray
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.51(Max) |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.37 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
ON Semiconductor's PNP 2N6287G Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This product's maximum continuous DC collector current is 20 A, while its minimum DC current gain is 100@20A@3 V|750@10A@3V. It has a maximum collector emitter saturation voltage of 2@40mA@10A|3@200mA@20A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@200mA@20A V. Its maximum power dissipation is 160000 mW. This component will be shipped in tray format. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |