Central Semiconductor2N6294 PBFREEDarlington BJT
Trans Darlington NPN 60V 4A 50000mW 3-Pin(2+Tab) TO-66
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.64(Max) mm |
| Verpackungsbreite | 17.52 mm |
| Verpackungslänge | 24.48(Max) + 7.16 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-66 |
| 3 | |
| Leitungsform | Through Hole |
Are traditional transistors not providing enough of a current gain? The NPN 2N6294 PBFREE Darlington transistor from Central Semiconductor can help. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |