| RoHS EU | Supplier Unconfirmed |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.75 |
| Automotive | No |
| PPAP | No |
| Typ | NPN |
| Kategorie | Bipolar Small Signal |
| Material | Si |
| Konfiguration | Single |
| Max. Kollektor-Basis-Spannung (V) | 60 |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Emitter-Basis-Spannung (V) | 6 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.2@0.5mA@10mA|0.6@5mA@100mA |
| Max. DC-Kollektorstrom (A) | 0.2 |
| Mindestgleichstromverstärkung | 250@100uA@5V|250@10mA@5V|250@10uA@5V|250@1mA@5V |
| Max. Leistungsaufnahme (mW) | 625 |
| Max. Übergangsfrequenz (MHz) | 700 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.21(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| Stiftanzahl | 3 |
| Leitungsform | Formed |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N6428 TRE GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
