Central Semiconductor2N6431 PBFREEGP BJT
Trans GP BJT NPN 300V 0.1A 1800mW 3-Pin TO-18
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 300 | |
| 300 | |
| 6 | |
| 0.9@2mA@20mA | |
| 0.5@2mA@20mA | |
| 0.1 | |
| 25@1mA@10V|40@10mA@10V|50@30mA@10V | |
| 1800 | |
| 50(Min) | |
| -65 | |
| 200 | |
| Durchmesser | 5.84(Max) |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-18 |
| 3 |
Design various electronic circuits with this versatile NPN 2N6431 PBFREE GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |