Toshiba2SA1162-GRTE85LFGP BJT
Trans GP BJT PNP 50V 0.15A 150mW Automotive AEC-Q101 3-Pin S-Mini T/R
| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 5 | |
| 0.3@10mA@100mA | |
| 0.15 | |
| 100 | |
| 200@2mA@6V | |
| 150 | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | S-MINI |
| Lieferantenverpackung | S-Mini |
| 3 | |
| Leitungsform | Gull-wing |
The versatility of this PNP 2SA1162-GR(TE85L,F) GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |