Micro Commercial Components2SA1213-Y-TPGP BJT
Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) SOT-89 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
50 | |
50 | |
5 | |
1.2@0.05A@1A | |
0.5@0.05A@1A | |
2 | |
120@0.5A@2V | |
1000 | |
120(Typ) | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6(Max) |
Verpackungsbreite | 2.65(Max) |
Verpackungslänge | 4.7(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-89 |
4 | |
Leitungsform | Flat |
Jump-start your electronic circuit design with this versatile PNP 2SA1213-Y-TP GP BJT from Micro Commercial Components. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V.