| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 5 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SMV |
| 5 | |
| Leitungsform | Gull-wing |
The versatility of this PNP 2SA1618-GR(TE85L,F GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C.
| EDA / CAD Models |
Suchen Sie immer noch nach den Teilen, die Sie brauchen?
Suchen Sie seltene Bauteile auf Verical.com, dem Marktplatz für elektronische Teile.