| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 5 | |
| 1.2@50mA@500mA | |
| 0.3@50mA@500mA|0.5@50mA@500mA | |
| 1 | |
| 140@100mA@2V|30@1A@2V | |
| 900 | |
| 150(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.5 mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 6.9 mm |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | NMP |
| 3 |
Use this versatile PNP 2SA1705S-AN GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |