| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 6.9 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | NMP |
| 3 |
Use this versatile PNP 2SA1705S-AN GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |