| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 7 | |
| 0.4 | |
| 1.2@100mA@1A | |
| -55 to 150 | |
| 0.24@100mA@1A | |
| 2 | |
| 100 | |
| 200@100mA@5V | |
| 800 | |
| 300(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 |
| Verpackungsbreite | 5.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP 2SA2205-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |