| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 6 | |
| 1.2@100mA@2A | |
| 0.7@100mA@2A | |
| 5 | |
| 140@100mA@2V | |
| 1000 | |
| 150(Typ) | |
| -55 | |
| 150 | |
| Bag | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.5 |
| Verpackungsbreite | 2.3 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | TP |
| 3 |
Implement this PNP 2SB1202S-E GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |